发明名称 |
Interstitial diffusion barrier |
摘要 |
<p>A heterojunction bipolar transistor is doped in the sub-collector layer (20) with phosphorus (24). The presence of the phosphorus causes any interstitial gallium (22) to be bonded (26) to the phosphorus (24) and move to a lattice site. The result is that the interstitial gallium does not diffuse to the base layer and thus does not cause the beryllium to be displaced and diffused. Instead of doping with phosphorus, a layer including phosphorus can also be utilized.</p> |
申请公布号 |
EP1191599(A2) |
申请公布日期 |
2002.03.27 |
申请号 |
EP20010119652 |
申请日期 |
2001.08.21 |
申请人 |
TRW INC. |
发明人 |
CHIN, PATRICK T.;GUTIERREZ-AITKEN, AUGUSTO L.;KANESHIRO, ERIC N. |
分类号 |
H01L29/207;H01L21/22;H01L21/331;H01L29/08;H01L29/737;(IPC1-7):H01L29/737 |
主分类号 |
H01L29/207 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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