III NITRIDE-BASED SEMICONDUCTOR LASER DEVICE

摘要

PURPOSE: To provide a III nitride-based semiconductor light emitting device which is improved in light emitting characteristic without increasing the manufacturing cost. CONSTITUTION: This III nitride-based semiconductor light emitting device contains an n-side AlGaN clad layer, n-side guide layer, active layer, p-side guide layer, and p-side AlGaN clad layer. The refractive index 8 of the p-side guide layer is larger than that 5 of the n-side guide layer.