METHOD FOR FABRICATING METAL INTERCONNECTION OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a metal interconnection of a semiconductor device is provided to make a tungsten layer pattern have a vertical profile, by using CHF3 gas as sidewall passivation gas so that an electrical connection of the metal interconnection is stably guaranteed. CONSTITUTION: A tungsten layer(18) is formed on a substrate(10) having a lower structure. A predetermined portion of the tungsten layer is anisotropically etched wherein SF6 gas is used as main etch gas and CHF3 gas is used as the sidewall passivation gas for controlling the profile. The lower structure has a transistor structure and an insulation layer. The transistor structure includes a gate electrode(12) and a source/drain electrode(14) formed inside the substrate adjacent to the sidewall of the gate electrode. The insulation layer(16) is formed on the transistor structure and the substrate.