| 摘要 |
Disclosed is a semiconductor quantum well device, such as a heterojunction diode laser, in which the quantum well layer is InGaAsN grown in the presence of Sb, but with negligible incorporation of Sb in the quantum well layer. Also disclosed is a method for forming a semiconductor quantum well device having the step of growing a thin quantum well layer of InGaAsN in the presence of Sb, but with negligible incorporation of Sb in the quantum well layer. Growth of the InGaAsN quantum well layer in the presence of Sb greatly improves the quality of the quantum well layer by inhibiting island formation during layer growth. In addition, there is disclosed a novel high electron mobility transistor having an InGaAsN active channel layer, which provides a larger conduction band offset than conventional transistors having an InGaAs active channel layer. Advantageously, the InGaAsN active channel layer is formed in the presence of Sb with negligible incorporation of Sb in the layer. |
