| 摘要 |
PCT No. PCT/GB96/01324 Sec. 371 Date Nov. 7, 1997 Sec. 102(e) Date Nov. 7, 1997 PCT Filed Jun. 4, 1996 PCT Pub. No. WO96/39719 PCT Pub. Date Dec. 12, 1996A semiconductor substrate, suitable for epitaxial growth thereon, comprising a plurality of layers of material. The interfaces between layers act as reflectors of electromagnetic radiation. The reflectors may be used in, for example, resonant cavities in which may be located, for example, multi-quantum well detectors, the efficiency of said detectors being increased by virtue of the enhanced electric field associated with resonance in the cavity. |
