Method of making a BicMOS device

摘要

For forming a semiconductor device comprises of: forming a first insulator layer over a surface of a semiconductor body having a first well region; implanting a base region in a first portion of the first well region; forming an emitter electrode over the first insulator layer and to base region. A portion of the emitter electrode extends through the first insulator layer to the base region. A portion of said first insulator layer not covered by the emitter electrode; is removed and a second insulator layer is grown on the surface of the semiconductor body; and a number of gate electrodes are formed on second insulator layer, where at least one of the gate electrodes is formed over the first well region; a number of source/drain regions are formed at the surface of the semiconductor body, where as a first one of the source/drain regions is formed between gate electrode and the emitter electrode tie first source/drain region contacting the base region.