| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of producing a single crystal silicon by which the high quality single crystal silicon, wherein the concentration of any one of silicon isotopes Si-28, Si-29 and Si-30 is higher than that in the natural silicon element, can be produced in large quantities. SOLUTION: The method of producing the single crystal silicon, wherein the concentration of the isotope Si-28 is higher than that of the isotope in the natural silicon element, comprises setting the concentration of the isotope Si-28 of the silicon element in a silicon melt 11 to be >=92.3% and setting the concentration of the isotope Si-28 of the silicon element in a seed crystal 13 to be >=92.3%. Further, when the single crystal is produced by a Czochralski method, quartz is used as a material for a crucible 12 for supporting the silicon melt 11 and the concentration of the isotope Si-28 of the silicon element in the quartz is also set to be >=92.3%.
|
