| 发明名称 |
Semiconductor memory device |
| 摘要 |
<p>A semiconductor memory device includes a field-effect transistor with a gate electrode (18) that has been formed over a semiconductor substrate (11) with a ferroelectric layer (16) interposed between the electrode and the substrate. The device includes a first insulating layer (17), which is insulated against a leakage current more fully than the ferroelectric layer, between the ferroelectric layer and the gate electrode. <IMAGE></p> |
| 申请公布号 |
EP1191604(A2) |
申请公布日期 |
2002.03.27 |
| 申请号 |
EP20010122458 |
申请日期 |
2001.09.20 |
| 申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
UCHIYAMA, KIYOSHI;SHIMADA, YASUHIRO;ARITA, KOJI;OTSUKI, TATSUO |
| 分类号 |
B65G1/137;G11C11/22;H01L21/8246;H01L21/8247;H01L27/105;H01L29/51;H01L29/78;H01L29/788;H01L29/792;(IPC1-7):H01L29/51;H01L21/28 |
主分类号 |
B65G1/137 |
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