Semiconductor device

摘要

A resurf structure is provided which includes an n type diffusion region surrounded by a n- diffusion region, in which a part of the joined combination of the n type diffusion region and the n- diffusion region is separated by a narrow p- substrate region in between. An aluminum lead is provided between the separated n-diffusion regions, and a signal is level shifted. A high voltage semiconductor device which includes a small area high voltage isolation region is obtained without process cost increase.