发明名称 TREATMENT APPARATUS AND TREATING SYSTEM
摘要 PURPOSE: To provide a treatment apparatus capable of realizing a uniform distribution of NF3 gas on a body to be treated within a treating container, and to provide a treating system. CONSTITUTION: This treatment apparatus 51 is constituted by a structure that the treatment apparatus 51 is provided with a treating container 53 with a wafer W arranged in its interior, an active gas species feed opening 79 for feeding activated N2 and H2 gases inside the container 53 and nozzles 105 for feeding NF3 gas which is activated by these activated N2 and H2 gases and the NF3 gas is made to activate by the N2 and H2 gases and the wafer W is treated using the activated NF3 gas. In this treater 51, the feed opening 79 and the nozzles 105 are provided in a ceiling plate 71 of the container 53.
申请公布号 KR20020022579(A) 申请公布日期 2002.03.27
申请号 KR20010057477 申请日期 2001.09.18
申请人 TOKYO ELECTRON LIMITED 发明人 IKEDA KYOKO;KOBAYASHI YASUO;MATSUSHIMA NORIAKI
分类号 H01L21/302;H01L21/00;H01L21/3065;(IPC1-7):H01L21/302 主分类号 H01L21/302
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