发明名称 NEGATIVE TYPE RESIST COMPOSITION
摘要 PROBLEM TO BE SOLVED: To provide a negative type electron beam or X-ray resist composition having high sensitivity and high resolving power, capable of giving pattern profile with superior rectangularity and excellent in PCD and PED stability. SOLUTION: The chemical amplification type negative type resist composition for electron beams and/or X-rays contains (A) an alkali-soluble resin containing at least one selected from the group comprising polyvinylphenols having partially alkyl-etherified, aryl-etherified, alkenyl-etherified or aralkyl-etherified phenolic hydroxyl groups and hydrogenated polyvinylphenols having partially alkyl- etherified, aryl-etherified, alkenyl-etherified or aralkyl-etherified phenolic hydroxyl groups, (B) a compound which generates an acid when irradiated with electron beams or X-rays, (C) a crosslinker which causes crosslinking under the acid and (D) a nitrogen-containing compound having at least one specified structure in one molecule.
申请公布号 JP2002090986(A) 申请公布日期 2002.03.27
申请号 JP20000280035 申请日期 2000.09.14
申请人 FUJI PHOTO FILM CO LTD 发明人 ADEGAWA YUTAKA
分类号 G03F7/004;C08K5/00;C08K5/16;C08L25/18;G03F7/038;H01L21/027 主分类号 G03F7/004
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