发明名称 Bi-directional differential low power sense amp and memory system
摘要 A device and method is provided for reducing power consumption in memory devices. The preferred embodiment reduces power consumption by providing a sense amplifier that reduces power consumption while providing high performance. In the preferred embodiment the sense amplifier comprises a bi-directional sense amp that is configurable for use on low power static random access memory (SRAM) devices. The bi-directional sense amp allows the same sense amp to be used for both read and write operations on the memory cells. The preferred embodiment sense amp facilitates the use of differential data buses, further reducing power consumption while providing high performance. Thus, the preferred embodiment bi-directional differential sense amp reduces the device size and complexity, reducing power consumption while providing high performance memory access.
申请公布号 US6363023(B2) 申请公布日期 2002.03.26
申请号 US20010792959 申请日期 2001.02.26
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 ANDERSEN JOHN E.;OUELLETTE MICHAEL R.
分类号 G11C7/06;G11C11/419;(IPC1-7):G11C7/02 主分类号 G11C7/06
代理机构 代理人
主权项
地址