发明名称 |
Methods and apparatus for forming a copper interconnect |
摘要 |
A method and apparatus for fabricating electrochemical copper interconnections between the component parts of an integrated circuit on a semiconductor device. A cathodic platter is provided that includes contact pins that contact the surface of a semiconductor wafer at predetermined locations during the electrochemical deposition process. The contact pins are arranged on the cathodic platter so that when placed on the surface of the semiconductor wafer the contact pins surround the perimetrical edges of each respective semiconductor device on the semiconductor wafer. Once the semiconductor wafer is properly positioned on the cathodic platter, a copper conductive layer can be electrochemically and uniformly deposited on the surface of the semiconductor device. |
申请公布号 |
US6362100(B1) |
申请公布日期 |
2002.03.26 |
申请号 |
US20000589839 |
申请日期 |
2000.06.08 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
NOGAMI TAKESHI;PREUSSE AXEL;DUBIN VALERY |
分类号 |
C25D7/12;C25D17/00;H01L21/288;(IPC1-7):H01L21/44 |
主分类号 |
C25D7/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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