发明名称 Method for fabricating a semiconductor device in a magnetron sputtering system
摘要 Disclosed is a magnetron sputtering system enabling formation of a film of a ferroelectric substance by suppressing occurrence of a magnetic field due to an eddy current. The magnetron sputtering system includes a flat target; magnetic field applying means (magnets), provided in the vicinity of a back surface of the target, for applying a magnetic field to a front surface of the target; and magnetic field rotating means (motor) for rotating the magnetic field applying means so as to rotate the magnetic field applied to the front surface of the target. The magnetic field rotating means is provided with rotational speed varying means (speed controller) for varying the rotational speed of the magnetic field applied by the magnetic field rotating means.
申请公布号 US6361662(B1) 申请公布日期 2002.03.26
申请号 US19970996321 申请日期 1997.12.22
申请人 SONY CORPORATION 发明人 CHIBA YASUHIRO;MAEDA KEIICHI;TAGUCHI MITSURU
分类号 C23C14/16;C23C14/35;H01J37/34;H01L21/203;H01L21/28;H01L21/285;H01L21/336;(IPC1-7):C23C14/34;H01L21/31;H01L21/469 主分类号 C23C14/16
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