| 摘要 |
The present invention relates to preparation of patterned workpieces in the production of semiconductor and other devices. Methods and devices are described utilizing resist and transfer layers over a workpiece substrate. The methods and devices produce small feature dimensions in masks and phase shift masks. The methods described may apply to both masks and direct writing on other workpieces having similarly small features, such as semiconductor, cryogenic, magnetic and optical microdevices. |
