Hydrogenated silicon carbide as a liner for self-aligning contact vias

摘要

The present invention provides a method of fabricating a self-aligning contact opening comprising: (a) forming a dielectric layer over a semiconductor substrate and gate electrodes located on the semiconductor substrate, (b) forming a carbide liner over the dielectric layer, and (c) etching at least a portion the carbide liner to form a self-aligning contact opening between the gate electrodes.