Structure comprising a thin layer of material made up of conductive zones and insulating zones and a method of manufacturing such a structure

摘要

A structure comprising a thin layer (2) that can be integral with a support (3), the thin layer being a layer of a semiconductor material made insulating by ion implantation except for at least one zone that permits a vertical electrical connection through the entire thickness of the thin layer (2). A method of manufacturing such a structure is also disclosed.