发明名称 Synchronous semiconductor memory device capable for more reliable communication of control signal and data
摘要 In an SDRAM, an unlocked-state detection circuit detects whether synchronization between an external clock signal and an internal clock signal generated in the SDRAM according to the external clock signal is locked. When the internal clock signal is inappropriately locked, a signal output from the SDRAM to a memory controller transitions low, and the controller ignores data received and the SDRAM performs a process to ignore an input command.
申请公布号 US6363030(B1) 申请公布日期 2002.03.26
申请号 US20000652139 申请日期 2000.08.31
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 OOISHI TSUKASA
分类号 G11C11/407;G06F1/12;G11C5/14;G11C7/10;G11C7/22;G11C8/18;G11C11/401;(IPC1-7):G11C8/00 主分类号 G11C11/407
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