发明名称 |
High yield performance semiconductor process flow for NAND flash memory products |
摘要 |
A semiconductor process for fabricating NAND type flash memory devices in a first embodiment includes step which can be performed on a production line which manufactures NOR type flash memory products. A NAND flash memory fabrication process according to a second embodiment simplifies the process and uses fewer masks, thus reducing costs and errors to produce higher yields. |
申请公布号 |
US6362049(B1) |
申请公布日期 |
2002.03.26 |
申请号 |
US19990435213 |
申请日期 |
1999.11.05 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
CAGNINA SALVATORE F.;FANG HAO;WANG JOHN JIANSHI;CHANG KENT KUOHUA;HIGASHITANI MASAATZI |
分类号 |
H01L21/8247;H01L27/10;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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