发明名称 High yield performance semiconductor process flow for NAND flash memory products
摘要 A semiconductor process for fabricating NAND type flash memory devices in a first embodiment includes step which can be performed on a production line which manufactures NOR type flash memory products. A NAND flash memory fabrication process according to a second embodiment simplifies the process and uses fewer masks, thus reducing costs and errors to produce higher yields.
申请公布号 US6362049(B1) 申请公布日期 2002.03.26
申请号 US19990435213 申请日期 1999.11.05
申请人 ADVANCED MICRO DEVICES, INC. 发明人 CAGNINA SALVATORE F.;FANG HAO;WANG JOHN JIANSHI;CHANG KENT KUOHUA;HIGASHITANI MASAATZI
分类号 H01L21/8247;H01L27/10;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L21/336 主分类号 H01L21/8247
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