发明名称 Semiconductor sample for transmission electron microscope and method of manufacturing the same
摘要 Described here is a method of forming a thin-film portion for allowing electrons produced from a transmission electron microscope to pass therethrough at a portion to be observed of a semiconductor and effecting a predetermined etching process on the thin-film portion thereby to create a semiconductor sample for the transmission electron microscope. Prior to the execution of the etching process, grooves for reducing a stress introduced into the thin-film portion by the etching process are defined in the thin-film portion.
申请公布号 US6362474(B1) 申请公布日期 2002.03.26
申请号 US19990386369 申请日期 1999.08.31
申请人 OKI ELECTRIC INDUSTRY CO., LTD. 发明人 OKIHARA MASAO
分类号 G01N1/32;G01N33/00;G01Q30/02;H01L21/66;(IPC1-7):H01J37/317;H01J37/305 主分类号 G01N1/32
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