发明名称 |
Semiconductor sample for transmission electron microscope and method of manufacturing the same |
摘要 |
Described here is a method of forming a thin-film portion for allowing electrons produced from a transmission electron microscope to pass therethrough at a portion to be observed of a semiconductor and effecting a predetermined etching process on the thin-film portion thereby to create a semiconductor sample for the transmission electron microscope. Prior to the execution of the etching process, grooves for reducing a stress introduced into the thin-film portion by the etching process are defined in the thin-film portion.
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申请公布号 |
US6362474(B1) |
申请公布日期 |
2002.03.26 |
申请号 |
US19990386369 |
申请日期 |
1999.08.31 |
申请人 |
OKI ELECTRIC INDUSTRY CO., LTD. |
发明人 |
OKIHARA MASAO |
分类号 |
G01N1/32;G01N33/00;G01Q30/02;H01L21/66;(IPC1-7):H01J37/317;H01J37/305 |
主分类号 |
G01N1/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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