| 摘要 |
A method of fabricating an integrated circuit (10, 51, 61, 71, 81, 91) includes forming on the upper surface (13) of a substrate (12) a part (18) which has thereon a side surface (19). A plurality of sidewalls (22, 27 and 83-84) are then formed in succession, outwardly from the side surface. A plurality of successive implants (21, 26, 31, 73-74, 87-88, 93-94) are introduced into the substrate, where a respective different subset of the sidewalls is present when each implant is created. The formation of sidewalls and implants may be carried out in an alternating manner, followed by removal of the sidewalls. Alternatively, removal of the sidewalls and formation of the implants may be carried out in an alternating manner. The width of each sidewall may be sublithographic, and the cumulative width of all sidewalls may be sublithographic.
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