| 摘要 |
In an ion implanter, in order to direct an ion beam from an ion generation source toward a silicon wafer to implant ions into the wafer, a filament as an electron source is heated to emit electrons and then electrons are converted to an electron beam. At this time, a magnetic field is applied from a magnetic circuit to both of the electron beam and a tungsten ion beam of tungsten ions emitted therefrom together with electrons to deflect the both beams depending on their masses and to separate the both beams into the electron beam and tungsten ion beam, tungsten ions in the tungsten ion beam are trapped by a silicon plate to irradiate only the electron beam onto the silicon wafer and to neutralize the silicon wafer to be charged.
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