发明名称 Apparatus and methods for upgraded substrate processing system with microwave plasma source
摘要 An apparatus and methods for an upgraded CVD system that provides a plasma for efficiently cleaning a chamber, according to a specific embodiment. Etching or depositing a layer onto a substrate also may be achieved using the upgraded CVD system of the present invention. In a specific embodiment, the present invention provides an easily removable, conveniently handled, and relatively inexpensive microwave plasma source as a retrofit for or a removable addition to existing CVD apparatus. In a preferred embodiment, the remote microwave plasma source efficiently provides a plasma without need for liquid-cooling the plasma applicator tube. In another embodiment, the present invention provides an improved CVD apparatus or retrofit of existing CVD apparatus capable of producing a plasma with the ability to efficiently clean the chamber when needed.
申请公布号 US6361707(B1) 申请公布日期 2002.03.26
申请号 US20000660322 申请日期 2000.09.12
申请人 APPLIED MATERIALS, INC. 发明人 TANAKA TSUTOMU;KELKAR MUKUL;FAIRBAIRN KEVIN;PONNEKANTI HARI;CHEUNG DAVID
分类号 H05H1/46;C23C16/50;C23C16/511;C23C16/52;H01J37/32;H01L21/205;H01L21/31;(IPC1-7):H01L21/00 主分类号 H05H1/46
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