SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a TFT using a crystalline semiconductor film obtained by improving the orientation property of a crystalline semiconductor film obtained by crystallizing an amorphous semiconductor film. SOLUTION: In the semiconductor device in which the TFT is formed of a semiconductor layer containing silicon as the main ingredient, the semiconductor layer has a channel forming region and an impurity region to which an impurity of one conductivity type is added. The channel forming region is constituted in such a way that the percentage of the angle between its (101)-plane detected by the reflection electron diffraction pattern method and the surface of the semiconductor film becomes <=10 deg. is >=20% and the percentage of the angle between its (001)-plane and the surface of the semiconductor film becomes <=10 deg. is <=3%. In addition, the percentage of the angle between its (111)-lattice plane and the surface of the semiconductor film becomes <=10 deg. is <=5%. Moreover, the concentrations of nitrogen and carbon detected by the secondary ion mass spectroscopy are adjusted to <5×1018/cm3 and the concentration of oxygen detected by the method is adjusted to <1×1019/cm3.