QUANTUM DOT STRUCTURE AND SEMICONDUCTOR DEVICE HAVING THAT

摘要

PROBLEM TO BE SOLVED: To provide a quantum dot structure subjected to control substitution of group V atoms between quantum dots and a matrix and mixing of group III atoms. SOLUTION: A quantum dot structure has second compound semiconductor materials consisting of group III-V elements as quantum dots 16 in a first compound semiconductor layer 18 consisting of group III-V elements. A third compound semiconductor layer 17 contains the same group III-V elements as those of the second compound semiconductor materials, and has the same band gap as that of the second compound semiconductor material or a band gap wider than that of the second compound semiconductor materials between the layer 18 and the second compound semiconductor materials.