发明名称 NITRIDE SEMICONDUCTOR LASER ELEMENT
摘要 PROBLEM TO BE SOLVED: To provide a laser element free of peeling of an electrode with high reliability by forming a resonance surface of a nitride semiconductor laser by cleavage. SOLUTION: This nitride semiconductor laser element has a striped positive electrode and a striped waveguide on a nitride semiconductor laser corresponding to the position of the positive electrode, the resonance surface of the waveguide is formed by cleavage of the substrate, and the positive electrode end surface on the side of a cleaved surface is inside the cleaved surface. Therefore, the shock caused by breaking at the cleavage time is not transmitted to the electrode end surface, and the electrode does not peel.
申请公布号 JP2002084036(A) 申请公布日期 2002.03.22
申请号 JP20010266307 申请日期 2001.09.03
申请人 NICHIA CHEM IND LTD 发明人 SUGIMOTO YASUNOBU
分类号 H01L21/205;H01S5/323;(IPC1-7):H01S5/323 主分类号 H01L21/205
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