| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that HF conventionally harmful for human being and troublesome in environment is to be used for preparing an integrated circuit and photonics, and to provide improved oxide etching. SOLUTION: In an etching method for silicon dioxide, this method is provided with a process for doping the layer of silicon dioxide and etching the doped layer of silicon dioxide with a phosphoric acid, for forming the doped layer of silicon dioxide.
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