| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having good characteristics and a high reliability and its manufacturing method which improves the crack resistance of a resin layer for stably holding inner leads forming a fine wiring pattern in a resin sealed semiconductor device having a UFPL structure. SOLUTION: A first and second IC chips 26a, 26b are adhered through an insulation paste 28 onto the surfaces of inner leads 24 and a liquid crystal polymer layer 20 around them, electrodes of these IC chips 26a, 26b are connected to the surfaces of the inner leads 24 forming the fine wiring pattern through Au wires 30, and the whole of them is sealed with a mold resin 32 to manufacture a resin sealed UFPL-structured semiconductor device. The backsides and the side faces of the inner leads forming the fine wiring pattern are covered with the liquid crystal polymer layer 20 having a far superior water absorption dimensional stability to the conventionally used polyimide layer, thereby reinforcing them.
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