发明名称 CHARGE PUMP CIRCUIT
摘要 PROBLEM TO BE SOLVED: To prevent current leakage of a charge pump circuit, comprising transistors of low thresholds. SOLUTION: Leakage current is prevented, by connecting the source terminal of a switch transistor with the output terminal of an inverter and driving the switch transistor and the inverter with the same signal, thereby applying reverse bias to in between the gate-source, at switch off.
申请公布号 JP2002084188(A) 申请公布日期 2002.03.22
申请号 JP20000278664 申请日期 2000.09.08
申请人 HITACHI LTD 发明人 SHIBAHARA YOSHIYUKI;KOKUBO MASARU;AOKI HIROKAZU
分类号 H03L7/093;(IPC1-7):H03L7/093 主分类号 H03L7/093
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