发明名称 METHOD OF MANUFACTURING SINGLE CRYSTAL FILM, AND SINGLE CRYSTAL FILM SUBSTRATE, AND SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a single crystal film, which is suitable for making of a device of high performance and stable properties, demarcating with respect to conventional polycrystalline film, and also whose manufacturing process is sufficient with short time, and to provide its manufacturing method. SOLUTION: A single crystal film 34 of a structure, in which the crystallization is advanced is made by making setting conditions of heat treatment, such as laser application, as those where polycrystalline grains are drawn up substantially regularly on an insulating substrate 31 when monocrystalizing a non-single crystal film, and heat-treating it, while keeping the surface condition of the polycrystalline grains being substantially aligned as it is.
申请公布号 JP2002083768(A) 申请公布日期 2002.03.22
申请号 JP20000269261 申请日期 2000.09.05
申请人 SONY CORP 发明人 SATO JUNICHI;USUI SETSUO;SAKAMOTO YASUHIRO;MORI YOSHIFUMI
分类号 C30B1/02;C30B29/06;C30B29/36;H01L21/20;(IPC1-7):H01L21/20 主分类号 C30B1/02
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