| 摘要 |
PROBLEM TO BE SOLVED: To provide a storage node of a semiconductor storage capacitive element, which allows a desired increase in capacitor, by completely crystallizing a surface-roughened silicon film to prevent the re-deformation in an after stage of the surface-roughened silicon film which constitutes the storage node, in the semiconductor storage capacitive element such as a capacitor for accumulating electric charges. SOLUTION: A method of manufacturing the storage node of the semiconductor storage capacitive element comprises a process of forming a first insulation film in a capacitive element section of the semiconductor storage device, forming a contact hole in a storage node formation section in the insulation film, and depositing an amorphous silicon film in the contact hole; a process of roughening the surface of the amorphous silicon film; and a process of completely crystallizing the surface-roughened silicon film. |
