| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for detecting an end point in chemical mechanical polishing(CMP) of a cloisonne structure. SOLUTION: A nitride layer 31 is stuck on the upper surface of a metal structure 21, at least and a metal oxide layer 22 is stuck on a metal structure 21 and the nitride layer 31. Next, the metal oxide layer 22 is polished using a CMP process while using a slurry, and the nitride layer 31 on the upper surface of the metal structure 21 is exposed. By polishing the nitride layer 31, ammonia is generated inside the slurry. The ammonia is extracted from the slurry as a gas, and according to the concentration of ammonia, a signal is generated. Then, according to the change of the signal, the CMP process is ended. As a suitable execution example, the metal oxide layer 22 is oxidized aluminium, the nitride layer 31 is aluminium nitride, and the nitride layer 31 is stuck on a substrate and the metal structure 21 as a conformal layer. |
