SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To overcome the problem of a prior art such that the patterning of a resist mask accompanying photo lithography causes increase in the number of the processes, the extension of process time, and increase in costs when a semiconductor device represented by an active-matrix-type display is manufactured. SOLUTION: As a method for forming an impurity region in a semiconductor layer 303, the semiconductor layer 303 is doped in self-alignment manner with a second conductive film 306 out of a gate electrode formed in two layers as a mask. The semiconductor layer is doped by passing through first conductive and insulating films 305 and 304, thus forming an LDD region in GOLD structure at a semiconductor layer 313.