| 摘要 |
PROBLEM TO BE SOLVED: To inhibit the generation of a dislocation loop defect caused by heavy ions even if the heavy ions essential to a shallow junction are used for a source/ drain high-concentration diffusion layer. SOLUTION: An extension high-concentration diffusion layer 15 where junction depth is shallower than a source/drain high-concentration diffusion layer 17 and N-type As ions are diffused is formed between the source/drain high- concentration diffusion layer 17 and a region at the lower side of the side surface of a gate electrode 13 in an epitaxial semiconductor substrate 11. Also, in a region at the lower side of an extension high-concentration diffusion layer 15, a pocket high-concentration diffusion layer 14 where P-type indium ions that are heavy ions with a relatively large number of mass is formed. Also, a channel diffusion layer 11 a where P-type In ions are diffused is formed in a region that is at the lower side of a gate electrode 13 in the epitaxial semiconductor substrate 11 and between the extension high-concentration diffusion layers 15 and between the pocket high-concentration diffusion layers 14.
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