| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device by which a gate insulating film, which is stable in an interfacial structure with a semiconductor substrate and satisfactory in its film quality, is obtained without causing the remarkable change of an impurity profile in the channel area of MISFET. SOLUTION: After forming a thermal oxide film 28 of about 1 nm thick on the surface of an Si substrate 21, the ion implantation of As(arsenic) as n-type impurities and B(boron) as p-type counter impurity respectively into the substrate through the thermal oxide film is performed and the respective impurities are activated. Next, an insulating film 29 consisting of a high dielectric film is accumulated on the thermal oxide film to obtain the gate insulating film.
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