| 摘要 |
PROBLEM TO BE SOLVED: To effectively clean a non-desired film adhered to each part during the film deposition on all the corners of a treatment vessel in a cold-wall type film deposition apparatus. SOLUTION: In the film deposition step, most of decomposed substance or reacted substance of reaction gas is deposited on a surface of a semi conductor wafer 14 while a part thereof is adhered to an outer circumferential edge part of a suscepter 12 or a wafer holding member (not shown in Figure), and a slightest amount thereof is also deposited on an inner wall surface of the treatment vessel 10. When the film deposition step is repeated predetermined times, the treatment vessel 10 is purged by H2 gas or N2 gas without any semi conductors 14 placed therein, and a cleaning step is performed after completing the purging step. In the cleaning step, cleaning gas which obtained by diluting ClF3 gas by N2 gas at a predetermined concentration from a cleaning gas supply system 24 is supplied into the treatment vessel 10 through a perforated plate 18.
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