| 摘要 |
PURPOSE: A method for forming a metal interconnection is provided to prevent an electron shading phenomenon and to improve the profile of the metal interconnection, by etching a metal layer for forming the metal interconnection by a pulse plasma etch method so that negative ions of the pulse plasma are actively generated. CONSTITUTION: The metal layer is formed on a lower structure(31). The metal layer is selectively etched to form a metal interconnection layer(32). The metal layer is selectively etched by a pulse plasma etch method using a frequency region where the density of negative ions and neutral radicals in the plasma increases.
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