| 摘要 |
PROBLEM TO BE SOLVED: To improve the vacuum state of a vacuum space 6. SOLUTION: A semiconductor wafer 21 is bonded on the upside of a pedestal 20 and after the semiconductor wafer 21 is worked, anode bonding of a base material 22 for lid is performed on the upside of the semiconductor wafer 21 but such anode bonding is performed step by step as spot-like anode bonding of the semiconductor wafer 21 and the base material 22 for lid is first performed and afterwards, full anode bonding of the semiconductor wafer 21 and the base material 22 for lid is performed. Afterwards, the laminate of the pedestal 20, the semiconductor wafer 21 and the base material 22 for lid is divided and separated for each set area. Thus, a vacuum vessel 1, with which the vacuum space 6 is formed inside the laminate of the pedestal layer, the semiconductor layer and the lid layer, can be prepared. The vacuum degree of the vacuum space 6 in each of vacuum vessels 1 is remarkably improved in comparison with conventional and vacuum degree dispersion between respective vacuum spaces 6 can be suppressed. |
