| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a new manufacturing method of a compound semiconductor thin film containing IB group elements, IIIB group elements, and VIB group elements. SOLUTION: In the manufacturing method of the compound semiconductor thin film containing IB group elements, IIIB group elements, and VIB group elements, there are included a process (a) for so feeding raw-material elements on a substrate by using at least a sputtering method as to form on the substrate a precursor thin film containing IB group elements and IIIB group elements or a precursor thin film containing IB group elements, IIIB group elements, and VIB group elements; and a process (b) for so subjecting the substrate having the formed precursor thin film to a heat treatment at a temperature higher than the temperature used in the process (a), while feeding onto the precursor thin film VIB group elements by using a method other than the sputtering method, as to form on the substrate out of the precursor thin film the compound semiconductor thin film containing IB group elements, IIIB group elements, and VIB group elements.</p> |
