| 摘要 |
PROBLEM TO BE SOLVED: To provide a photodetector having a built-in circuit wherein an IC increased in operation speed by using an HBT wherein an SiGe layer is employed, and a divided photodiode can be formed on the same substrate, and also provide a method of manufacturing the same. SOLUTION: The photodetector having a built-in circuit comprises a semiconductor substrate, an IC formed on the semiconductor substrate, and a photodiode formed in the semiconductor substrate. The IC includes an SiGe layer formed at least in part of it.
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