| 摘要 |
PROBLEM TO BE SOLVED: To provide a production method for semiconductor integrated circuit device for improving the breakdown voltage of transistors in the dielectric separated complementary bipolar transistor of an NPN transistor and a longitudinal PNP transistor. SOLUTION: In the production method for semiconductor integrated circuit device, when forming the collector area and collector extraction area of the semiconductor integrated circuit device, by laminating four epitaxial layers, the buried layer of the collector area and the buried layer of the collector extraction area are simultaneously formed for each epitaxial layer. Then, the respective buried layers are diffused, linked and etched to a V groove die. Thus, the collector area and collector extraction area made into thick films are simultaneously formed and breakdown voltage is improved.
|
