| 摘要 |
PROBLEM TO BE SOLVED: To improve the reliability of contact by preventing short-circuiting caused by contacting the base of a recessed electrode and an adjacent pad. SOLUTION: This semiconductor device is provided with a pad 23 provided on a cell contact plug 9 under an interlayer dielectric 24 and a cylinder type lower storage capacitor electrode 26 as a recessed electrode, which has the base greater than that of the pad 23 and connects the relevant base to the pad 23. Then, a connection part 261 is formed from the base of the lower storage capacitor electrode 26 to one part on the pad 23 and between the remaining part on the pad 23 and the base of the lower storage capacitor electrode 26, a side wall 22 of a silicon oxide film is interposed as an insulating film for short-circuiting prevention. |
