Selective growth of semiconductor structure

摘要

High quality epitaxial layers of compound semiconductor materials can be selectively grown overlying large silicon wafers by first growing an accomodating buffer layer (24) on a silicon wafer (22). The accomodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous intermediate layer (28) of silicon oxide. The amorphous intermediate layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Any lattice mismatch between the accomodating buffer layer and the underlying silicon substrate is taken care of by the amorphous intermediate layer. The buffer layer is reduced on thickness in selected areas. In one area (18) of the buffer layer, a layer of an amorphous material (25) is deposited to inhibit growth of monocrystalline compound semiconductor material (26). Alternating areas of the buffer layer include a compound semiconductor material.