| 摘要 |
PROBLEM TO BE SOLVED: To improve MOS transistor characteristic by finding an ion implantation condition which retrieves concentration of the electric field on an LDD diffusion layer while suppressing threshold voltage (Vth) increase and drive current (Ids) drop. SOLUTION: By performing 'setting of an ion implantation initial condition' S1, 'setting of a channel impurities introducing condition' S2, 'setting of an ion implantation condition to make high acceleration energy and to fix threshold voltage' S3, 'the selection of a condition matching the desired transistor characteristic from the set ion implantation condition' S4, 'the propriety' S5, 'changing of the initial condition' S6 and 'selecting and setting of the ion implantation condition' S7, a condition where the acceleration energy is high and a dose quantity is low by fixing the voltage (Vth) to a desired value as the ion implantation condition which can retrieve the electric field of an LDD end part efficiently while saving drive current (Ids) drop of a MOS transistor. |
