| 摘要 |
PROBLEM TO BE SOLVED: To provide a carrying mechanism of a semiconductor component wherein the semiconductor component can be prevented from damaging due to the generation of a discharge during its carriage. SOLUTION: In the carrying mechanism, a Raydent processing film 10 is formed in the inner surface of a carrying rail 1 opposed to leads 7, and the quality of the sealing resin material of a semiconductor component 6 is set selectively to the one hard to generate the frictional static electricity between the Raydent processing film 10 and it. Even when a discharge is generated between the lead 7 and the film 10 by the lead 7 approaching the film 10, a charge charged in a capacitor C of an electrostatic capacitor system is zero at t=0 and approaches Q=CE along a relaxed time slope dependent on 1/(CRl). Therefore, the leading edge of the discharging waveshape is relaxed to suppress the rapid increase of the discharge current. As a result, the energy of the discharge is decreased to make preventable the damage of the lead 7 caused by the electrostatic discharge. Further, by the high lubricating ability of the Raydent processing film 10, there is reduced the side run-out of the semiconductor component 6 which is generated on a rail main body 5 during the component 6 sliding on the rail 1. Moreover, the effect of preventing the portion of the lead 7 from damaging due to the electrostatic discharge is improved to make possible the miniaturization of the whole of the carrying mechanism.
|
