| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, which improves adhesive strength of a capacitor electrode and an interlayer dielectric or has a strong capacitor structure, and a production method therefor. SOLUTION: This device is provided with the interlayer dielectrics 21, 22 and 23 provided on a silicon oxide film 16 while having an opening 31, with which a contact plug 18 is exposed on the bottom, reaching the silicon oxide film 16, liner 19 provided along with the bottom and side face of the opening 31 and recessed from the upper surface of the interlayer dielectric 23, stack type lower capacitor electrode 20 provided while being partially embedded in the opening 31 in contact with the silicon oxide film 16 and the interlayer dielectrics 21 and 22 through the liner 19 and composed of the materials of platinum, capacitor insulating film 24 provided on the lower capacitor electrode 20 and composed of high dielectric materials, and upper capacitor electrode 25 provided on the capacitor insulating film 24. |
