| 摘要 |
PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor device of low dielectric constant and low Cu diffusibility suitable for a damascene method and a production method therefor. SOLUTION: A wiring layer HL of a top layer having a Cu layer 107 embedded in a trench hole 108 and a via hole 109 is formed on a wiring layer LL of a lower layer by the damascene method. As an etching stopper film 110 to be used for the damascene method, a film (SiCN film) containing Si, C and B as main elements is used. This SiCN etching stopper film is formed to have CHn radicals for 1021-1022 in the film and shows a low dielectric constant (<=6) and low Cu diffusibility. Therefore, the semiconductor device of small inter- wiring capacitance and high reliability is produced.
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