| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser element which can stably perform high optical output. SOLUTION: This semiconductor laser element has an n-type lower clad layer 2, a lower light-confinement layer 3, an active layer 4 in quantum well structure, an upper light-confinement layer 5, Zn-doped p-type upper clad layers 6A and 6B, and a cap layer 7 in this order; and a non-doped semiconductor layer 8 of 5 to 20 nm in thickness, especially, a non-doped InP layer is interposed between the n-type lower clad layer 2 and lower light-confinement layer 3.
|
