发明名称 |
Semiconductor device and dummy pattern placing method |
摘要 |
The semiconductor device includes a semiconductor substrate and, in an element isolating region in the semiconductor substrate, a first active area A/A dummy pattern and a second A/A dummy pattern having a pitch smaller than that of the first A/A dummy pattern. Placement of the first A/A dummy pattern and placement of the second A/A dummy pattern are carried out in separate steps. The semiconductor substrate may be divided into a plurality of mesh regions, and a dummy pattern may be placed in each mesh region according to an area of the mesh region being occupied by an element pattern located therein.
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申请公布号 |
US2002033488(A1) |
申请公布日期 |
2002.03.21 |
申请号 |
US20010828981 |
申请日期 |
2001.04.10 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
KAWASHIMA HIROSHI;OKADA MASAKAZU;KITANI TAKESHI;IGARASHI MOTOSHIGE |
分类号 |
H01L21/3105;H01L21/762;(IPC1-7):H01L27/10;H01L21/476 |
主分类号 |
H01L21/3105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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