| 摘要 |
In forming a layer of a semiconductor wafer (100), a dielectric layer is deposited on the semiconductor wafer. The dielectric layer (208) includes material having a low dielectric constant. Recessed (210) and non-recessed (211) areas are formed in the dielectric layer. A metal layer is deposited o n the dielectric layer to fill the recessed areas and cover the non-recessed areas. The metal layer is then electropolished to remove the metal layer covering the non-recessed areas while maintaining the metal layer in the recessed areas.
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